Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements
Identifieur interne : 001677 ( Main/Repository ); précédent : 001676; suivant : 001678Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements
Auteurs : RBID : Pascal:12-0191603Descripteurs français
- Pascal (Inist)
- Défaut ponctuel, Addition bismuth, Détecteur, DLTS, Dopage, Centre accepteur, Piège, Cadmium, Lacune, Interstitiel, Etat défaut, Niveau profond, Centre donneur, Tellurure de zinc, Tellurure de cadmium, Système 2 niveaux, Indium, Bismuth, Coupe transversale, Section efficace, CdZnTe, In, 0707D, 6172J.
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Abstract
We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[PbCd]+-V2-Cd]-. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (VCd), and a deep trap at around 1.1 eV.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements</title><author><name sortKey="Gul, R" uniqKey="Gul R">R. Gul</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Brookhaven National Laboratory</s1><s2>Upton, NY 11973</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Brookhaven National Laboratory</wicri:noRegion></affiliation></author><author><name sortKey="Keeter, K" uniqKey="Keeter K">K. Keeter</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Idaho State University, Pocatello</s1><s2>ID 83209</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Idaho</region></placeName></affiliation></author><author><name sortKey="Rodriguez, R" uniqKey="Rodriguez R">R. Rodriguez</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Idaho State University, Pocatello</s1><s2>ID 83209</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Idaho</region></placeName></affiliation></author><author><name sortKey="Bolotnikov, A E" uniqKey="Bolotnikov A">A. E. Bolotnikov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Brookhaven National Laboratory</s1><s2>Upton, NY 11973</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Brookhaven National Laboratory</wicri:noRegion></affiliation></author><author><name sortKey="Hossain, A" uniqKey="Hossain A">A. Hossain</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Brookhaven National Laboratory</s1><s2>Upton, NY 11973</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Brookhaven National Laboratory</wicri:noRegion></affiliation></author><author><name sortKey="Camarda, G S" uniqKey="Camarda G">G. S. Camarda</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Brookhaven National Laboratory</s1><s2>Upton, NY 11973</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Brookhaven National Laboratory</wicri:noRegion></affiliation></author><author><name sortKey="Kim, K H" uniqKey="Kim K">K. H. Kim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Brookhaven National Laboratory</s1><s2>Upton, NY 11973</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Brookhaven National Laboratory</wicri:noRegion></affiliation></author><author><name sortKey="Yang, G" uniqKey="Yang G">G. Yang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Brookhaven National Laboratory</s1><s2>Upton, NY 11973</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Brookhaven National Laboratory</wicri:noRegion></affiliation></author><author><name sortKey="Cui, Y" uniqKey="Cui Y">Y. Cui</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Brookhaven National Laboratory</s1><s2>Upton, NY 11973</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Brookhaven National Laboratory</wicri:noRegion></affiliation></author><author><name sortKey="Carcelen, V" uniqKey="Carcelen V">V. Carcelen</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Universidad Autonoma de Madrid</s1><s2>Madrid</s2><s3>ESP</s3><sZ>10 aut.</sZ></inist:fA14><country>Espagne</country><wicri:noRegion>Universidad Autonoma de Madrid</wicri:noRegion></affiliation></author><author><name sortKey="Franc, J" uniqKey="Franc J">J. Franc</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Charles University</s1><s2>Prague</s2><s3>CZE</s3><sZ>11 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>Charles University</wicri:noRegion></affiliation></author><author><name sortKey="Li, Z" uniqKey="Li Z">Z. Li</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Brookhaven National Laboratory</s1><s2>Upton, NY 11973</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Brookhaven National Laboratory</wicri:noRegion></affiliation></author><author><name sortKey="James, R B" uniqKey="James R">R. B. James</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Brookhaven National Laboratory</s1><s2>Upton, NY 11973</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Brookhaven National Laboratory</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0191603</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0191603 INIST</idno><idno type="RBID">Pascal:12-0191603</idno><idno type="wicri:Area/Main/Corpus">001E89</idno><idno type="wicri:Area/Main/Repository">001677</idno></publicationStmt><seriesStmt><idno type="ISSN">0361-5235</idno><title level="j" type="abbreviated">J. electron. mater.</title><title level="j" type="main">Journal of electronic materials</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acceptor center</term><term>Bismuth</term><term>Bismuth additions</term><term>Cadmium</term><term>Cadmium tellurides</term><term>Cross section</term><term>Cross sections</term><term>DLTS</term><term>Deep level</term><term>Defect states</term><term>Detectors</term><term>Donor center</term><term>Doping</term><term>Indium</term><term>Interstitials</term><term>Point defects</term><term>Traps</term><term>Two-level systems</term><term>Vacancies</term><term>Zinc tellurides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Défaut ponctuel</term><term>Addition bismuth</term><term>Détecteur</term><term>DLTS</term><term>Dopage</term><term>Centre accepteur</term><term>Piège</term><term>Cadmium</term><term>Lacune</term><term>Interstitiel</term><term>Etat défaut</term><term>Niveau profond</term><term>Centre donneur</term><term>Tellurure de zinc</term><term>Tellurure de cadmium</term><term>Système 2 niveaux</term><term>Indium</term><term>Bismuth</term><term>Coupe transversale</term><term>Section efficace</term><term>CdZnTe</term><term>In</term><term>0707D</term><term>6172J</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term><term>Cadmium</term><term>Bismuth</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a V<sub>Cd </sub>trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb<sub>Cd</sub>]<sup>+</sup>-V<sup>2-</sup><sub>Cd</sub>]<sup>-</sup>. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V<sub>Cd</sub>), and a deep trap at around 1.1 eV.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0361-5235</s0></fA01><fA02 i1="01"><s0>JECMA5</s0></fA02><fA03 i2="1"><s0>J. electron. mater.</s0></fA03><fA05><s2>41</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements</s1></fA08><fA11 i1="01" i2="1"><s1>GUL (R.)</s1></fA11><fA11 i1="02" i2="1"><s1>KEETER (K.)</s1></fA11><fA11 i1="03" i2="1"><s1>RODRIGUEZ (R.)</s1></fA11><fA11 i1="04" i2="1"><s1>BOLOTNIKOV (A. E.)</s1></fA11><fA11 i1="05" i2="1"><s1>HOSSAIN (A.)</s1></fA11><fA11 i1="06" i2="1"><s1>CAMARDA (G. S.)</s1></fA11><fA11 i1="07" i2="1"><s1>KIM (K. H.)</s1></fA11><fA11 i1="08" i2="1"><s1>YANG (G.)</s1></fA11><fA11 i1="09" i2="1"><s1>CUI (Y.)</s1></fA11><fA11 i1="10" i2="1"><s1>CARCELEN (V.)</s1></fA11><fA11 i1="11" i2="1"><s1>FRANC (J.)</s1></fA11><fA11 i1="12" i2="1"><s1>LI (Z.)</s1></fA11><fA11 i1="13" i2="1"><s1>JAMES (R. B.)</s1></fA11><fA14 i1="01"><s1>Brookhaven National Laboratory</s1><s2>Upton, NY 11973</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></fA14><fA14 i1="02"><s1>Idaho State University, Pocatello</s1><s2>ID 83209</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Universidad Autonoma de Madrid</s1><s2>Madrid</s2><s3>ESP</s3><sZ>10 aut.</sZ></fA14><fA14 i1="04"><s1>Charles University</s1><s2>Prague</s2><s3>CZE</s3><sZ>11 aut.</sZ></fA14><fA20><s1>488-493</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>15479</s2><s5>354000194686370100</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>14 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0191603</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of electronic materials</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a V<sub>Cd </sub>trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb<sub>Cd</sub>]<sup>+</sup>-V<sup>2-</sup><sub>Cd</sub>]<sup>-</sup>. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V<sub>Cd</sub>), and a deep trap at around 1.1 eV.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60A72J</s0></fC02><fC02 i1="02" i2="3"><s0>001B00G07D</s0></fC02><fC02 i1="03" i2="X"><s0>001D03C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Défaut ponctuel</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Point defects</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Addition bismuth</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Bismuth additions</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Détecteur</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Detectors</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>DLTS</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>DLTS</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Dopage</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Doping</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Doping</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Centre accepteur</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Acceptor center</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Centro aceptor</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Piège</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Traps</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Cadmium</s0><s2>NC</s2><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Cadmium</s0><s2>NC</s2><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Lacune</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Vacancies</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Interstitiel</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Interstitials</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Etat défaut</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Defect states</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Niveau profond</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Deep level</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Nivel profundo</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Centre donneur</s0><s5>14</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Donor center</s0><s5>14</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Centro dador</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Tellurure de zinc</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Zinc tellurides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Tellurure de cadmium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Cadmium tellurides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Système 2 niveaux</s0><s5>29</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Two-level systems</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>30</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>30</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Bismuth</s0><s2>NC</s2><s5>31</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Bismuth</s0><s2>NC</s2><s5>31</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Coupe transversale</s0><s5>32</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Cross section</s0><s5>32</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Corte transverso</s0><s5>32</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Section efficace</s0><s5>33</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Cross sections</s0><s5>33</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>CdZnTe</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>In</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>0707D</s0><s4>INC</s4><s5>65</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>6172J</s0><s4>INC</s4><s5>71</s5></fC03><fN21><s1>149</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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